Recently, the optoelectronic research team led by the American Academy of Engineering and Professor John Bowers of the University of California, Santa Barbara developed a directly modulated micro-green laser pointer on the silicon.
It is reported that the laser is epitaxially grown and integrated on a silicon wafer compatible with the CMOS process. The use of quantum dot-specific substrate defects, sidewall non-radiative recombination effects are reduced, and the buffer layer is optimized to reduce the dislocation density of the interface between the III-V material and the silicon wafer. Excellent green laser pointer performance on heterogeneous growth material systems with large differences in reverse domain, lattice mismatch and thermal expansion coefficient: single mode lasing in the 1.3 μm communication band and 103K features Temperature high temperature operating environment stability and low threshold current of 3mA, 3 dB bandwidth of 6.5 GHz.
The use of quantum dots with sidewall non-radiative recombination affects the reduced performance. This study is based on the idea of a novel laser architecture combining microring resonators with quantum dots. Epitaxial growth of small electrically pumped quantum dots on silicon The laser pointer solves the problem that the electrode metallization is limited by the micro-sized cavity and the optical loss caused by the defect of the whispering gallery mode (WGM) in the process through a complicated process flow.
Professor John Bowers, deputy director of the Integrated Photonics Manufacturing Innovation Center in the United States, said that this work is an important step in the development of an epitaxial process for directly growing III-V elements on silicon substrates to replace the traditional wafer bonding process. Scale the green laser pointer while reducing costs, shrinking size and reducing power consumption.