Semiconductor laser pointer is a device that generates laser light by using a certain semiconductor material as a working substance. Semiconductor lasers realize non-equilibrium carriers between the energy bands of semiconductor materials (conduction band and valence band), or between the energy bands of semiconductor materials and the energy levels of impurities (acceptors or donors) through certain excitation methods. When a large number of electrons and holes in the state of population inversion recombine, stimulated emission occurs.
Semiconductor laser is a device that generates laser light by using a certain semiconductor material as a working substance. Semiconductor lasers realize non-equilibrium carriers between the energy bands of semiconductor materials (conduction band and valence band), or between the energy bands of semiconductor materials and the energy levels of impurities (acceptors or donors) through certain excitation methods. When a large number of electrons and holes in the state of population inversion recombine, stimulated emission occurs.
There are three main excitation modes of semiconductor lasers, namely, electric injection, optical pumping and high-energy electron beam excitation. Electrical injection semiconductor lasers, generally semiconductor surface junction diodes made of gallium arsenide (GaAs), cadmium sulfide (CdS), indium phosphide (InP), zinc sulfide (ZnS) and other materials, are forward biased The current is injected for excitation, and stimulated emission occurs in the junction plane area. Optically pumped semiconductor laser engraver generally use N-type or P-type semiconductor single crystals (such as GaAS, InAs, InSb, etc.) as the working material, and use laser light from other lasers as optical pump excitation. High-energy electron beam-excited semiconductor lasers generally use N-type or P-type semiconductor single crystals (such as PbS, CdS, ZhO, etc.) as working materials, and are excited by external injection of high-energy electron beams. Among the semiconductor laser devices, the performance is better and the most widely used is the electric injection GaAs diode laser with double heterostructure.
Semiconductor laser The semiconductor laser was successfully excited in 1962 and achieved continuous output at room temperature in 1970. Later, after improvements, the double heterojunction laser and laser diode with stripe structure were developed, which are widely used in optical fiber communications, optical disks, laser printers, laser scanners, and laser pointers (laser pointers). Production volume of Zda lasers.
There are three main excitation modes of semiconductor lasers, namely, electric injection, optical pumping and high-energy electron beam excitation. Electrical injection semiconductor lasers, generally semiconductor surface junction diodes made of gallium arsenide (GaAs), cadmium sulfide (CdS), indium phosphide (InP), zinc sulfide (ZnS) and other materials, are forward biased The current is injected for excitation, and stimulated emission occurs in the junction plane area. Optically pumped semiconductor lasers generally use N-type or P-type semiconductor single crystals (such as GaAS, InAs, InSb, etc.) as the working material, and use laser light from other lasers as optical pump excitation. High-energy electron beam-excited semiconductor lasers generally use N-type or P-type semiconductor single crystals (such as PbS, CdS, ZhO, etc.) as working materials, and are excited by external injection of high-energy electron beams. Among the semiconductor blue laser pointer devices, the performance is better and the most widely used is the electric injection GaAs diode laser with double heterostructure.
Semiconductor laser The semiconductor laser was successfully excited in 1962 and achieved continuous output at room temperature in 1970. Later, after improvements, the double heterojunction laser and laser diode with stripe structure were developed, which are widely used in optical fiber communications, optical disks, laser printers, laser scanners, and laser pointers (laser pointers). Production volume of Zda lasers.